The HEROSYS DDR3 UDIMM (Unbuffered DIMM) industrial memory module is designed in strict accordance with JEDEC standards, tailored for desktop PCs, industrial computers, and embedded systems. The module is built with high-quality original DRAM chips from leading global brands—Micron, SK Hynix, and Samsung—and undergoes comprehensive functional verification and extended reliability testing to ensure exceptional performance and durability, even in volatile or harsh environments.
HEROSYS DDR3 modules also emphasize environmental responsibility and durability, complying with RoHS lead-free and halogen-free standards. Optional conformal coating, underfill, and anti-sulfuration features are available to enhance resistance against moisture and environmental contaminants, making it a dependable and stable memory solution for industrial control and embedded applications.
Features
Built with high-quality DDR3 DRAM chips from top-tier original manufacturers (Micron / SK Hynix / Samsung)
No on-DIMM temperature sensor
PCB height: 30.00 mm; pin pitch: 1.0 mm
240-pin dual in-line memory module (UDIMM)
Operating voltage: 1.35V (tolerance: +0.1V / –0.067V), 1.5V (tolerance: ±0.075V)
IC surface operating temperature: 0°C to 85°C
Refresh cycle time (0°C to 85°C): 7.8 μs
Lead-free, RoHS compliant
Halogen-free
Optional conformal coating and underfill for added environmental protection
Optional anti-sulfuration feature for use in high-sulfur or polluted environments
