The HEROSYS DDR4 SODIMM (Small Outline Dual In-line Memory Module) is designed in compliance with JEDEC standards and optimized for space-constrained applications such as notebook computers, compact industrial PCs, and embedded systems. Built with original, high-quality DRAM chips from Micron, SK Hynix, or Samsung, it delivers data transfer rates of up to 3200 MT/s, ensuring fast and stable data processing performance.
Engineered for exceptional stability, compatibility, and reliability, the HEROSYS DDR4 SODIMM is a high-performance memory solution ideal for industrial control and embedded applications that demand dependable operation.
Features
Data transfer rate up to 3200 MT/s
Equipped with original high-quality DRAM chips (Micron / SK Hynix / Samsung)
No on-DIMM temperature sensor
Module dimensions: PCB height 30.00 mm, pin pitch 0.50 mm
260-pin Small Outline Dual In-line Memory Module (SO-DIMM)
Supply voltage: VDD = VDDQ = 1.2V (operating range: 1.14V to 1.26V)
When IC surface temperature < 85°C: Average refresh interval = 7.8 μs
When 85°C ≤ IC surface temperature ≤ 95°C: Average refresh interval = 3.9 μs
Lead-free (RoHS compliant)
Halogen-free
Optional conformal coating / underfill
Optional anti-sulfuration protection